four. For integrated circuits with “interleaved ADCs” or with “many channel ADCs” that are specified to acquire an interleaved method of Procedure, the “sample costs” are aggregated and the “sample rate” is the most blended whole amount website of all of the interleaved channels.
k. devices made for ion beam deposition or Actual physical vapor deposition of a multi-layer reflector for “EUV” masks;
e.2. made to variety an integrated process in a vacuum environment for `sequential several wafer processing';
three. `Paraxial configuration' pertains to one or more sensors which might be bodily mounted onto or built-in into your “laser”, electron beam, or electric powered arc consolidation resource part.
technological Note: to the uses of 3B001.d.eight, `function perform metal' is a cloth that controls the threshold voltage of the transistor.
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ECCN 3E905 will not, by way of example, Management an integrated circuit style and design like the Bodily structure file in GDSII format or EDA equipment, or every other technological know-how applied to supply the Actual physical structure file for built-in circuit style.” For these reasons, BIS isn't going to believe There's an overlap of controls involving ECCN 3E905 and 3E001 or 3E002. market is invited to submit responses about the clarity on the Handle text of this ECCN, plus the clarification statement BIS input from the Related Management paragraph. due to the fact ECCN 3E905 was never ever intended to Manage GAAFET architecture for 3D NAND, i.e.,
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technological Be aware: For the uses of 3A001.g, a `thyristor module' includes a number of thyristor equipment.
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3C001 Hetero-epitaxial resources consisting of the “substrate” obtaining stacked epitaxially developed many levels.